糖心原创

Advanced Materials Research Group

Publications

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SHIPWAY, P. H., WOOD, S. J. and DENT, A. H., 1997. Wear. VOL 203/204(NUMBER COM), 196-205

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SHIPWAY, P. H., 1997. Wear. VOL 205(NUMBER 1/2), 169-177

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BHATTACHARYA, A. K., PYKE, D. R., WALKER, G. S. and WERRETT, C. R., 1997. Applied Surface Science. VOL 108(NUMBER 4), 465-470

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WALKER, G. S., WILLIAMS, E. and BHATTACHARYA, A. K., 1997. Journal of Materials Science. VOL 32(NUMBER 21), 5583-5592

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BHATTACHARYA, A K, PYKE, D R, WALKER, G S, WERRETT, C R and , 1997. The use of O1s charge referencing for mixed metal oxides J. Mater. Sci. Lett.. 16, 1-3 (In Press.)

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XIN, Y., BROWN, P. D., HUMPHREYS, C. J., CHENG, T. S. and FOXON, C. T., 1997. Applied Physics Letters. VOL 70(NUMBER 10), 1308-1310

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DUNINBORKOWSKI, R.E., HUMPHREYS, C.J., FOXON, C.T., CHENG, T.S., XIN, Y. and BROWN, P.D., 1997. Journal of Crystal Growth. 171(3,4), 321-332

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XIN, Y., BROWN, P. D., CHENG, T. S., FOXON, C. T. and HUMPHREYS, C. J., 1997. Domain boundaries in epitaxial GaN grown on {1 1 1}B GaAs and GaP by molecular beam epitaxy Conference Series- Institute of Physics: Microscopy of semiconducting materials. 157, 95-98

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BROWN, P.D., 1997. HRTEM and XRD Characterisation of MnSb/GaAs, MnSb/Si and MnSb Sapphure Heterostructures Grown by Hot-Wall Epitaxy In: Symposium on Physics and Applications of Spin-Related Phenonmenon.

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TRICKER, D. M., BROWN, P. D., XIN, Y., CHENG, T. S., FOXON, C. T. and HUMPHREYS, C. J., 1997. The relationship between epitaxial growth, defect microstructure and luminescence in GaN Conference Series- Institute of Physics. 153, 429-432

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LIU, C. P., BOOTHROYD, C. B., BROWN, P. D. and HUMPHREYS, C. J., 1997. The characterisation of ultrathin doping layers in semiconductors using high-angle annular dark-field imaging Conference Series- Institute of Physics. 157, 67-70

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TATSUOKA, H., BROWN, P. D., XIN, Y., ISAJI, K., KUWABARA, H., NAKANISHI, Y., NAKAMURA, T., FUJIYASU, H. and HUMPHREYS, C. J., 1997. Structural characterisation of MnSb/GaAs and MnSb/Si heterostructures grown by Hot-Wall Epitaxy Conference Series- Institute of Physics: Microscopy of semiconducting materials. 157, 59-62

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HUMPHREYS, C. J., BOTTON, G. A., BROWN, P. D., ETHERIDGE, J., MOODIE, A. F., PETERS, M. A. and XIN, Y., 1997. Recent important advances in materials science Boletin- Sociedad Espanola De Ceramica Y Vidrio. 36(2/3), 100-103

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LIU, C. P., DUNIN-BORKOWSKI, R. E., BOOTHROYD, C. B., BROWN, P. D. and HUMPHREYS, C. J., 1997. Microscopy and Microanalysis. 3(4), 352-363

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LIU, C. P., BROWN, P. D., BOOTHROYD, C. B. and HUMPHREYS, C. J., 1997. The effects of surface relaxation and ion thinning on 毛-doped semiconductor cross-sections Conference Series- Institute of Physics: Microscopy of semiconducting materials. 157, 483-486
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Advanced Materials Research Group

Faculty of Engineering
The 糖心原创
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Nottingham, NG7 2RD



email:AdvMaterials@nottingham.ac.uk